GIGABYTE AORUS Gen4 5000E PCI-E 4.0 NVMe 1.4 500GB Internal SSD, Up to 5000 MB/s Sequential Read & Up to 3800 MB/s Sequential Write Speeds, 3D TLC NAND Flash, Black | AG450E500G-G

• Form Factor: M.2 2280
• Interface: PCI-Express 4.0 x4, NVMe 1.4
• Total Capacity: 500GB*
• Sequential Read Speed : up to 5,000MB/s**
• Sequential Write speed : up to 3,800MB/s**
• HMB (Host Memory Buffer) supported
• TRIM & S.M.A.R.T supported
• Energy-efficient

Specification

• Interface
  PCI-Express 4.0×4, NVMe 1.4
• Form Factor
  M.2 2280
• Total Capacity
  500GB
• NAND
  3D TLC NAND Flash
• Sequential Read speed
  Up to 5,000 MB/s
• Sequential Write speed
  Up to 3,800 MB/s
• Dimension
  80 x 22 x 2.3 mm
• Mean time between failure (MTBF)
  1.5 million hours
• Power Consumption (Active)
  Average : R : 4W / W : 4W
• Power Consumption(Idle)(ASPT on)
  20mW
• Temperature (Operating)
  0°C to 70°C
• Temperature (Storage)
  -40°C to 85°C
• Warranty
  • 1. Limited 5-years or 300TBW.
  • 2. Limited warranty based on 5 years or 300TBW, whichever comes first. (*TBW is evaluated by JEDEC workload standard. )
    *TBW (Terabyte Written): Terabytes Written is the total amount of data that can be written into a SSD before it is likely to fail.
  • 3. When the usage of an NVME SSD as indicated by the “Percentage Used” (SMART ID: 05) in SMART page of “GIGABYTE SSD toolbox” reaches 100 means out of warranty. (A new unused product will show the number of 0)
• Note
  • • Test system configuration: configuration may vary by models, we will choose the latest platform for verification.
  • • Performance may vary based on SSD’s firmware version and system hardware & configuration. Sequential performance measurements based on CrystalDiskMark and IOmeter 1.1.0.
  • • Speeds based on internal testing. Actual performance may vary.
  • • 1GB = 1 billion bytes. Actual useable capacity may vary.